发明公开
- 专利标题： MEMORY DEVICE PACKAGE HAVING SCRIBE LINE AND METHOD FOR MANUFACTURING THE SAME
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申请号： US18367626申请日： 2023-09-13
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公开(公告)号： US20240170412A1公开(公告)日： 2024-05-23
- 发明人: WU-DER YANG
- 申请人： NANYA TECHNOLOGY CORPORATION
- 申请人地址： TW New Taipei City
- 专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址： TW New Taipei City
- 分案原申请号： US18056549 2022.11.17
- 主分类号： H01L23/544
- IPC分类号： H01L23/544 ; H01L21/66 ; H01L21/78 ; H01L23/00 ; H01L23/538 ; H01L25/00 ; H01L25/065
摘要：
A memory device package and a method of manufacturing a memory device package. The memory device package includes a substrate having a first chip region, a second chip region, and a first scribe line region connected between the first chip region and the second chip region. The memory device package also includes a first memory chip disposed over the first chip region and a second memory chip disposed over the second chip region.
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IPC分类:
