Invention Publication
- Patent Title: INTEGRATED CIRCUIT DEVICES
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Application No.: US18462883Application Date: 2023-09-07
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Publication No.: US20240096755A1Publication Date: 2024-03-21
- Inventor: Heewon KANG , Byungsu KIM , Sunhee PARK , Sangjoon CHEON , Jaeseung CHOI
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR 20220119540 2022.09.21
- Main IPC: H01L23/48
- IPC: H01L23/48 ; G06F30/392 ; G06F30/394

Abstract:
An integrated circuit device includes a first chip and a second chip. The first chip includes a first substrate including a through-via region, a prohibition region, and a device region, the prohibition region surrounding the through-via region in a plan view. The first chip further includes a through-via penetrating the first substrate in the through-via region, and a power gating cell disposed in the prohibition region. The second chip includes a second substrate, and a plurality of circuit blocks configured to receive power and/or signals through the through-via.
Information query
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