A nonvolatile memory device may include a channel layer extending in a first direction; a plurality of gate electrodes and a plurality of spacers alternately arranged with each other in the first direction, and a gate insulating layer extending in the first direction. Each of the plurality of gate electrodes and each of the plurality of spacers may extend in a second direction crossing the first direction. The gate insulating layer may extend in the first direction. The gate insulating layer may be between the channel layer and the plurality of gate electrodes. The channel layer may include a two-dimensional semiconductor material having an electrically p-type property.