- 专利标题: MEMORY DEVICE INTERFACE AND METHOD
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申请号: US18215474申请日: 2023-06-28
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公开(公告)号: US20240070069A1公开(公告)日: 2024-02-29
- 发明人: Brent Keeth , Owen Fay , Chan H. Yoo , Roy E. Greeff , Matthew B. Leslie
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 主分类号: G06F12/06
- IPC分类号: G06F12/06 ; G06F12/02 ; G11C11/4093 ; G11C29/12 ; H01L25/065 ; H01L25/18
摘要:
Apparatus and methods are disclosed, including memory devices and systems. Example memory devices, systems and methods include a buffer interface to translate high speed data interactions on a host interface side into slower, wider data interactions on a DRAM interface side. The slower, and wider DRAM interface may be configured to substantially match the capacity of the narrower, higher speed host interface. In some examples, the buffer interface may be configured to provide multiple sub-channel interfaces each coupled to one or more regions within the memory structure and configured to facilitate data recovery in the event of a failure of some portion of the memory structure. Selected example memory devices, systems and methods include an individual DRAM die, or one or more stacks of DRAM dies coupled to a buffer die.
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