- 专利标题： THROUGH SILICON BURIED POWER RAIL IMPLEMENTED BACKSIDE POWER DISTRIBUTION NETWORK SEMICONDUCTOR ARCHITECTURE AND METHOD OF MANUFACTURING THE SAME
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申请号： US18386497申请日： 2023-11-02
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公开(公告)号： US20240063123A1公开(公告)日： 2024-02-22
- 发明人: Saehan PARK , Hoonseok Seo , Gil Hwan Son , Byounghak Hong , Kang Ill Seo
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 分案原申请号： US17389622 2021.07.30
- 主分类号： H01L23/528
- IPC分类号： H01L23/528 ; H01L27/06 ; H01L23/48 ; H01L21/768 ; H01L21/822
摘要：
Provided is a semiconductor architecture including a wafer, a first semiconductor device provided on a first surface of the wafer, the first semiconductor device being configured to route signals, a second semiconductor device provided on a second surface of the wafer opposite to the first surface of the wafer, the second semiconductor device being configured to supply power, and a buried power rail (BPR) included inside of the wafer and extending from the first surface of the wafer to the second surface of the wafer, the BPR being configured to deliver the power from the second semiconductor device to the first semiconductor device.
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