Invention Publication
- Patent Title: THROUGH SILICON BURIED POWER RAIL IMPLEMENTED BACKSIDE POWER DISTRIBUTION NETWORK SEMICONDUCTOR ARCHITECTURE AND METHOD OF MANUFACTURING THE SAME
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Application No.: US18386497Application Date: 2023-11-02
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Publication No.: US20240063123A1Publication Date: 2024-02-22
- Inventor: Saehan PARK , Hoonseok Seo , Gil Hwan Son , Byounghak Hong , Kang Ill Seo
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- The original application number of the division: US17389622 2021.07.30
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L27/06 ; H01L23/48 ; H01L21/768 ; H01L21/822

Abstract:
Provided is a semiconductor architecture including a wafer, a first semiconductor device provided on a first surface of the wafer, the first semiconductor device being configured to route signals, a second semiconductor device provided on a second surface of the wafer opposite to the first surface of the wafer, the second semiconductor device being configured to supply power, and a buried power rail (BPR) included inside of the wafer and extending from the first surface of the wafer to the second surface of the wafer, the BPR being configured to deliver the power from the second semiconductor device to the first semiconductor device.
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