- 专利标题: CONDUCTING BUILT-IN SELF-TEST OF MEMORY MACRO
-
申请号: US18486789申请日: 2023-10-13
-
公开(公告)号: US20240055066A1公开(公告)日: 2024-02-15
- 发明人: Ted Wong , Saman Adham , Marat Gershoig , Vineet Joshi
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 主分类号: G11C29/36
- IPC分类号: G11C29/36 ; G11C29/12 ; G11C29/44
摘要:
Performing a built-in self-test (BIST) on a memory macro includes generating a plurality of input vectors such that at least one input vector of the plurality of input vectors is transmitted to the memory macro in each of a plurality of cycles, receiving in each of the plurality of cycles, an output data from the memory macro. The output data is generated by the memory macro in response to processing the at least one input vector. The BIST also includes comparing the output data in each of the plurality of cycles with a signature value and determining whether the memory macro is normal or faulty based upon the comparison.
信息查询