- 专利标题： ELECTROSTATIC PROTECTION CIRCUIT AND SEMICONDUCTOR DEVICE
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申请号： US18466492申请日： 2023-09-13
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公开(公告)号： US20240006408A1公开(公告)日： 2024-01-04
- 发明人: TSUTOMU TOMIOKA
- 申请人： ABLIC Inc.
- 申请人地址： JP Nagano
- 专利权人： ABLIC Inc.
- 当前专利权人： ABLIC Inc.
- 当前专利权人地址： JP Nagano
- 优先权： JP 19233133 2019.12.24
- 分案原申请号： US17112070 2020.12.04
- 主分类号： H01L27/02
- IPC分类号： H01L27/02 ; H02H9/04
摘要：
An electrostatic protection circuit and a semiconductor device include: a first diode whose anode is connected to a signal terminal; a second diode whose cathode is connected to a cathode of the first diode and whose anode is connected to a GND terminal; and a depletion type MOS transistor connected in parallel with the first diode.
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