- 专利标题： METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
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申请号： US17854997申请日： 2022-06-30
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公开(公告)号： US20240006247A1公开(公告)日： 2024-01-04
- 发明人: Bau-Ming WANG , Liang-Yin CHEN , Huicheng CHANG , Yee-Chia YEO
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/265
摘要：
A method for manufacturing a semiconductor device includes: forming a first type well in a substrate; and after forming the first type well in the substrate, forming a second type well in the substrate, where the second type well has a conductivity type different from that of the first type well. One of the first and second type wells is formed by sequentially performing multiple ion implantations that use different energies, and one of the ion implantations that uses a lowest energy among the ion implantations is performed first among the ion implantations.
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