Aspects of the invention include systems and methods configured to provide parasitic capacitance-aware dummy metal fill methodologies. A non-limiting example computer-implemented method includes selecting one or more layers in a circuit design layout for interlayer parasitic capacitance reduction. One or more dummy metal shapes in each of the one or more layers selected for interlayer parasitic capacitance reduction is adjusted (e.g., trimmed, moved, and/or reshaped). One or more adjusted dummy metal shapes are modified until the circuit design layout satisfies design rule checking (DRC) analysis and timing is closed.