- 专利标题： METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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申请号： US17810349申请日： 2022-07-01
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公开(公告)号： US20240004302A1公开(公告)日： 2024-01-04
- 发明人: Yu-Chen HUANG
- 申请人： NANYA TECHNOLOGY CORPORATION
- 申请人地址： TW New Taipei City
- 专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址： TW New Taipei City
- 主分类号： G03F7/38
- IPC分类号： G03F7/38 ; H01L21/027 ; G03F7/039
摘要：
A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. A portion of the photoresist layer is exposed, using a mask, to a radiation. The photoresist layer is treated, using a basic gas. The photoresist layer is developed to form a patterned photoresist layer over the substrate.
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