VARIABLE RESISTANCE ELEMENT, STORAGE DEVICE, AND NEURAL NETWORK APPARATUS
摘要:
A variable resistance element according to an embodiment serves to change to a low resistance state or a high resistance state. The variable resistance element includes a first transition metal compound layer, a second transition metal compound layer, and a lithium ion conductor layer. The first transition metal compound layer is connected to a first electrode. The first transition metal compound layer is a metal compound containing lithium ions in lattice interstices. The second transition metal compound layer is connected to a second electrode. The second transition metal compound layer is a metal compound containing lithium ions in lattice interstices. The lithium ion conductor layer is provided between the first transition metal compound layer and the second transition metal compound layer. The lithium ion conductor layer is a solid substance that is permeable to lithium ions and is less permeable to electrons.
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