- 专利标题: NONVOLATILE SEMICONDUCTOR MEMORY
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申请号: US18242521申请日: 2023-09-06
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公开(公告)号: US20230409241A1公开(公告)日: 2023-12-21
- 发明人: Hiroshi MAEJIMA
- 申请人: Kioxia Corporation
- 申请人地址: JP Tokyo
- 专利权人: Kioxia Corporation
- 当前专利权人: Kioxia Corporation
- 当前专利权人地址: JP Tokyo
- 优先权: JP 19113565 2019.06.19
- 主分类号: G06F3/06
- IPC分类号: G06F3/06 ; G11C16/08 ; G06N3/08 ; G11C16/04
摘要:
A nonvolatile semiconductor memory includes a plurality of memory cells, a plurality of bit lines connected to the plurality of memory cells, a first circuit which controls the plurality of bit lines according to first data, a source line commonly connected to first ends of the plurality of bit lines, and a second circuit which is connected to the source line and which detects second data according to a current amount in the source line.
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