- 专利标题: BAW RESONATORS WITH ANTISYMMETRIC THICK ELECTRODES
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申请号: US18339939申请日: 2023-06-22
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公开(公告)号: US20230336151A1公开(公告)日: 2023-10-19
- 发明人: Dae Ho Kim , Mary Winters , Zhiqiang Bi
- 申请人: Akoustis, Inc.
- 申请人地址: US NC Huntersville
- 专利权人: Akoustis, Inc.
- 当前专利权人: Akoustis, Inc.
- 当前专利权人地址: US NC Huntersville
- 主分类号: H03H9/13
- IPC分类号: H03H9/13 ; H03H9/02 ; H03H9/54 ; H03H9/17
摘要:
A resonator circuit device. This device can include a piezoelectric layer having a front-side electrode and a back-side electrode spatially configured on opposite sides of the piezoelectric layer. Each electrode has a connection region and a resonator region. Each electrode also includes a partial mass-loaded structure configured within a vicinity of its connection region. The front-side electrode and the back-side electrode are spatially configured in an anti-symmetrical manner with the resonator regions of both electrodes at least partially overlapping and the first and second connection regions on opposing sides. This configuration provides a symmetric acoustic impedance profile for improved Q factor and can reduce the issues of misalignment or unbalanced boundary conditions associated with conventional single mass-loaded perimeter configurations.
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