- 专利标题: GLASS SUBSTRATE AND METHOD FOR MANUFACTURING GLASS SUBSTRATE
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申请号: US18339476申请日: 2023-06-22
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公开(公告)号: US20230335427A1公开(公告)日: 2023-10-19
- 发明人: Yuha KOBAYASHI , Kenji GOTO
- 申请人: AGC Inc.
- 申请人地址: JP Tokyo
- 专利权人: AGC Inc.
- 当前专利权人: AGC Inc.
- 当前专利权人地址: JP Tokyo
- 优先权: JP 20214053 2020.12.23
- 主分类号: H01L21/683
- IPC分类号: H01L21/683 ; C03C3/095 ; C03C3/089 ; C03C3/091 ; C03C3/093 ; C03C3/083 ; C03C3/085 ; C03C3/087 ; C03C3/078 ; C03B5/18
摘要:
To appropriately manufacture a semiconductor device. A glass substrate is a glass substrate for manufacturing the semiconductor device. In a case in which one surface is directed downward in a vertical direction, and a first position, a second position, and a third position on the one surface on an outer side in a radial direction with respect to a center point of the glass substrate are supported by supporting members, a lowest point as a position where a height in the vertical direction is the lowest on other surface is positioned in a circular central region on an inner side in the radial direction with respect to the first position, the second position, and the third position when viewed from the vertical direction, a center of the central region is a center point of the glass substrate, and a diameter of the central region has a length of ⅓ of a diameter of the glass substrate.
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