- 专利标题: GROUP 4 METAL ELEMENT-CONTAINING COMPOUND, PRECURSOR COMPOSITION INCLUDING SAME, AND METHOD FOR MANUFACTURING THIN FILM USING SAME
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申请号: US18025017申请日: 2021-09-06
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公开(公告)号: US20230312614A1公开(公告)日: 2023-10-05
- 发明人: Hyun-Kee KIM , Cheol-Wan PARK , Ki-Yeung MUN , Ee-Seul SHIN , Eun-Jeong CHO , Jang-Hyeon SEOK , Jung-Woo PARK
- 申请人: HANSOL CHEMICAL CO., LTD.
- 申请人地址: KR Seoul
- 专利权人: HANSOL CHEMICAL CO., LTD.
- 当前专利权人: HANSOL CHEMICAL CO., LTD.
- 当前专利权人地址: KR Seoul
- 优先权: KR 20200114508 2020.09.08
- 国际申请: PCT/KR2021/012037 2021.09.06
- 进入国家日期: 2023-03-07
- 主分类号: C07F7/00
- IPC分类号: C07F7/00 ; C07F7/28 ; C23C16/455 ; C23C16/40 ; C23C16/44
摘要:
The present disclosure relates to a novel Group 4 metal element-containing compound having excellent thermal stability, a precursor composition including the compound, and a method for manufacturing a thin film using the precursor composition. The novel Group 4 metal element-containing compound according to the present disclosure and the vapor deposition precursor composition including the compound can have excellent thermal stability, realize thin film deposition in a wide temperature range, and reduce residues caused by heat loss, thereby preventing side reactions in a process. Additionally, the vapor deposition precursor composition according to the present disclosure can realize uniform thin film deposition, thereby securing excellent physical properties of the thin film.
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