- 专利标题: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
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申请号: US17821632申请日: 2022-08-23
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公开(公告)号: US20230307419A1公开(公告)日: 2023-09-28
- 发明人: Soichi HOMMA , Chikara MIYAZAKI
- 申请人: Kioxia Corporation
- 申请人地址: JP Tokyo
- 专利权人: Kioxia Corporation
- 当前专利权人: Kioxia Corporation
- 当前专利权人地址: JP Tokyo
- 优先权: JP 22047566 2022.03.23
- 主分类号: H01L25/065
- IPC分类号: H01L25/065 ; H01L25/18 ; H01L21/56 ; H01L23/00
摘要:
A semiconductor device of an embodiment includes: a first semiconductor element; a first insulating resin that seals the first semiconductor element; a wiring substrate having a pad; a first wiring that extends from the first semiconductor element toward the wiring substrate, and has a first head portion and a first column portion, the first column portion connected to the first semiconductor element and the first head portion exposed on a surface of the first insulating resin; and a first conductive bonding agent that electrically connects the first head portion of the first wiring and the pad. When a surface of the first head portion facing a side of the first insulating resin is defined as a first surface. A surface of the first insulating resin on a side of the wiring substrate is defined as a second surface. A distance from a surface of the wiring substrate on a side of the first insulating resin to the first surface is defined as a first distance, and a distance from a surface of the wiring substrate on the side of the first insulating resin to the second surface is defined as a second distance. The first distance is shorter than the second distance.
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