Invention Publication
- Patent Title: IN-PLANE SLIDING PARALLEL CAPACITIVE RADIO FREQUENCY SWITCH
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Application No.: US17923297Application Date: 2020-06-28
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Publication No.: US20230238191A1Publication Date: 2023-07-27
- Inventor: Quanshui ZHENG , Xiaojian XIANG
- Applicant: RESEARCH INSTITUTE OF TSINGHUA UNIVERSITY IN SHENZHEN , TSINGHUA UNIVERSITY
- Applicant Address: CN Shenzhen, Guangdong
- Assignee: RESEARCH INSTITUTE OF TSINGHUA UNIVERSITY IN SHENZHEN,TSINGHUA UNIVERSITY
- Current Assignee: RESEARCH INSTITUTE OF TSINGHUA UNIVERSITY IN SHENZHEN,TSINGHUA UNIVERSITY
- Current Assignee Address: CN Shenzhen, Guangdong
- International Application: PCT/CN2020/098479 2020.06.28
- Date entered country: 2022-11-04
- Main IPC: H01H1/00
- IPC: H01H1/00

Abstract:
An in-plane sliding parallel capacitive radio frequency (RF) switch includes a substrate, first to third drive components, an insulating layer, and a sliding component. Where a drive voltage is applied between the first and second drive components, the sliding component slides to the top of the first and second drive components; in this case, relatively large capacitance is formed between the first and second drive components and the sliding component, a RF signal is almost completely reflected, and the transmission is cut off. Where the drive voltage is applied between the second and third drive components, the sliding component slides to the top of the second and third drive components; in this case, no facing area between a first drive electrode and the sliding component exists in a vertical direction, the capacitance is rather small, and the RF signal may be transmitted basically without loss.
Public/Granted literature
- US12106911B2 In-plane sliding parallel capacitive radio frequency switch Public/Granted day:2024-10-01
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