- 专利标题: Exposed Copper Area for Port Electrostatic Discharge Protection
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申请号: US17685924申请日: 2022-03-03
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公开(公告)号: US20230232144A1公开(公告)日: 2023-07-20
- 发明人: Ketan Shringarpure , Warwick Ka Kui Wong , Chi Kin Benjamin Leung , Yao Ding , Jingyu Huang , Jae Lee
- 申请人: Google LLC
- 申请人地址: US CA Mountain View
- 专利权人: Google LLC
- 当前专利权人: Google LLC
- 当前专利权人地址: US CA Mountain View
- 主分类号: H04R1/08
- IPC分类号: H04R1/08 ; H04R1/04 ; H02H9/04
摘要:
The disclosure generally relates to a conductive layer having one or more protrusions configured to attract an electrostatic discharge (“ESD”) arc. The device may be any device, such as a smartphone, tablet, earbuds, etc. The device may include a microphone and, therefore, may include a microphone opening. The conductive layer may include a conductive opening axially aligned with the microphone opening and one or more protrusions extending radially inwards towards the center of the conductive opening.
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