An integrated circuit includes a capacitor with a bottom conductive plate and a top conductive plate. A passivation layer is disposed above the top conductive plate. An intermetal dielectric layer is disposed between the bottom conductive plate and the top conductive plate and is formed of a first dielectric material. Shield layers are disposed between the top conductive plate and above the intermetal dielectric layer and extend horizontally to at least past guard rings. The shield layers include a dielectric layer formed of dielectric material having a dielectric constant greater than the material of the intermetal dielectric layer. The shield layers include horizontally offset trenches to stop horizontal flow of current in the shield layers. The offset ensures there is no vertical path from the passivation layer to lower/ground potentials through the shield layers.