- 专利标题： METAL ETCH IN HIGH ASPECT-RATIO FEATURES
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申请号： US17307636申请日： 2021-05-04
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公开(公告)号： US20220359214A1公开(公告)日： 2022-11-10
- 发明人: Baiwei Wang , Xiaolin C. Chen , Rohan Puligoru Reddy , Oliver Jan , Zhenjiang Cui , Anchuan Wang
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; H01L27/1157 ; H01J37/305
摘要：
Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or include oxygen or nitrogen. A flow rate ratio of the fluorine-containing precursor to the secondary gas may be greater than or about 1:1. The methods may include contacting a substrate with the fluorine-containing precursor and the secondary gas. The substrate may include an exposed metal. The substrate may define a high aspect-ratio structure. The methods may include etching the exposed metal within the high aspect-ratio structure.
公开/授权文献
- US11631589B2 Metal etch in high aspect-ratio features 公开/授权日：2023-04-18
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