- 专利标题： Semiconductor Device and Method of Manufacture
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申请号： US17238808申请日： 2021-04-23
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公开(公告)号： US20220344151A1公开(公告)日： 2022-10-27
- 发明人: Wei-Min Liu , Li-Li Su , Yee-Chia Yeo
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/3065 ; H01L21/28 ; H01L21/8238 ; H01L29/66 ; H01L29/06 ; H01L29/423 ; H01L29/775 ; H01L29/78 ; H01L29/786 ; H01L27/092 ; H01L29/08 ; H01L29/165 ; H01J37/32 ; H01J37/05 ; C23C16/50 ; C23C16/08 ; C23C16/02 ; C23C16/56 ; C30B25/10 ; C30B25/14 ; C30B25/18 ; C30B29/52
摘要：
A method includes flowing first precursors over a semiconductor substrate to form an epitaxial region, the epitaxial region includes a first element and a second element; converting a second precursor into first radicals and first ions; separating the first radicals from the first ions; and flowing the first radicals over the epitaxial region to remove at least some of the second element from the epitaxial region.
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