A semiconductor device is provided. The semiconductor device includes a first-direction plurality of wirings extending in a first direction, and a second-direction plurality of wiring extending in a second direction intersecting the first direction. The first-direction plurality of wirings that extend in the first direction includes gate wirings spaced apart from each other in the second direction by a gate pitch, first wirings above the gate wirings spaced apart from each other in the second direction by a first pitch, second wirings above the first wirings spaced apart from each other in the second direction by a second pitch, and third wirings above the second wirings spaced apart from each other in the second direction by a third pitch. A ratio between the gate pitch and the second pitch is 6:5.