- 专利标题: BOND ENHANCEMENT STRUCTURE IN MICROELECTRONICS FOR TRAPPING CONTAMINANTS DURING DIRECT-BONDING PROCESSES
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申请号: US17681019申请日: 2022-02-25
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公开(公告)号: US20220246564A1公开(公告)日: 2022-08-04
- 发明人: Guilian Gao , Javier A. DeLaCruz , Shaowu Huang , Liang Wang , Gaius Gillman Fountain, JR. , Rajesh Katkar , Cyprian Emeka Uzoh
- 申请人: INVENSAS BONDING TECHNOLOGIES, INC.
- 申请人地址: US CA San Jose
- 专利权人: INVENSAS BONDING TECHNOLOGIES, INC.
- 当前专利权人: INVENSAS BONDING TECHNOLOGIES, INC.
- 当前专利权人地址: US CA San Jose
- 主分类号: H01L23/00
- IPC分类号: H01L23/00
摘要:
Structures and techniques provide bond enhancement in microelectronics by trapping contaminants and byproducts during bonding processes, and arresting cracks. Example bonding surfaces are provided with recesses, sinks, traps, or cavities to capture small particles and gaseous byproducts of bonding that would otherwise create detrimental voids between microscale surfaces being joined, and to arrest cracks. Such random voids would compromise bond integrity and electrical conductivity of interconnects being bonded. In example systems, a predesigned recess space or predesigned pattern of recesses placed in the bonding interface captures particles and gases, reducing the formation of random voids, thereby improving and protecting the bond as it forms. The recess space or pattern of recesses may be placed where particles collect on the bonding surface, through example methods of determining where mobilized particles move during bond wave propagation. A recess may be repeated in a stepped reticule pattern at the wafer level, for example, or placed by an aligner or alignment process.
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