- 专利标题： SILICON MATERIAL AND METHOD OF MANUFACTURE
-
申请号： US17525769申请日： 2021-11-12
-
公开(公告)号： US20220153594A1公开(公告)日： 2022-05-19
- 发明人: Robert C. Ionescu , Chueh Liu
- 申请人： ionobell Inc.
- 申请人地址： US CA San Jose
- 专利权人： ionobell Inc.
- 当前专利权人： ionobell Inc.
- 当前专利权人地址： US CA San Jose
- 主分类号： C01B33/02
- IPC分类号： C01B33/02 ; H01M4/38 ; H01M4/36 ; H01M4/583
摘要：
A silicon material can include a composition with at least about 50% silicon, at most about 45% carbon, and at most about 10 % oxygen. The silicon material can have an external expansion that is less than about 40%. The silicon material can include silicon nanoparticles, which can cooperatively form clusters. The silicon nanoparticles can be porous.
公开/授权文献
- US11584653B2 Silicon material and method of manufacture 公开/授权日：2023-02-21
信息查询
