- 专利标题: HIGH CONNECTIVITY DEVICE STACKING
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申请号: US17578271申请日: 2022-01-18
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公开(公告)号: US20220139884A1公开(公告)日: 2022-05-05
- 发明人: Kurtis LESCHKIES , Han-Wen CHEN , Steven VERHAVERBEKE , Giback PARK , Kyuil CHO , Jeffrey L. FRANKLIN , Wei-Sheng LEI
- 申请人: Applied Materials, Inc.
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01L25/065
- IPC分类号: H01L25/065 ; H05K1/14 ; H01L23/522 ; H01L23/495 ; H01L25/00
摘要:
The present disclosure generally relates to stacked miniaturized electronic devices and methods of forming the same. More specifically, embodiments described herein relate to semiconductor device spacers and methods of forming the same. The semiconductor device spacers described herein may be utilized to form stacked semiconductor package assemblies, stacked PCB assemblies, and the like.
公开/授权文献
- US11742330B2 High connectivity device stacking 公开/授权日:2023-08-29
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