- 专利标题: POWER SEMICONDUCTOR MODULE WITH PRESS-FIT CONTACT ELEMENT
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申请号: US17230649申请日: 2021-04-14
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公开(公告)号: US20210336370A1公开(公告)日: 2021-10-28
- 发明人: INGO BOGEN , Alexander WEHNER
- 申请人: SEMIKRON ELEKTRONIK GMBH & CO. KG
- 申请人地址: DE Nuremberg
- 专利权人: SEMIKRON ELEKTRONIK GMBH & CO. KG
- 当前专利权人: SEMIKRON ELEKTRONIK GMBH & CO. KG
- 当前专利权人地址: DE Nuremberg
- 优先权: DEDE102020111526.1 20200428
- 主分类号: H01R13/426
- IPC分类号: H01R13/426 ; H01R13/415 ; H01R12/58
摘要:
A power semiconductor module has a substrate, load and auxiliary connector elements, and a plastic body, which preferably is a housing or a housing frame and which has a channel. The channel being for the arrangement of a compensating portion of a press-fit contact element. The press-fit contact element has a press-fit portion, a compensating portion and a foot portion, the compensating portion being elastic in a longitudinal direction of the press-fit contact element and having at least two O-shaped sub-portions arranged in succession in the longitudinal direction and having a constriction arranged between two sub-portions.
公开/授权文献
- US11387588B2 Power semiconductor module with press-fit contact element 公开/授权日:2022-07-12
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