- 专利标题： BIAS CURRENT GENERATOR CIRCUIT
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申请号： US17249717申请日： 2021-03-10
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公开(公告)号： US20210286389A1公开(公告)日： 2021-09-16
- 发明人: Jiawei Fu , Jianzhou Wu , Jie Jin , Yikun Mo , Stefano Pietri
- 申请人： NXP USA, Inc.
- 申请人地址： US TX Austin
- 专利权人： NXP USA, Inc.
- 当前专利权人： NXP USA, Inc.
- 当前专利权人地址： US TX Austin
- 优先权： CN202010173143.8 20200312
- 主分类号： G05F1/565
- IPC分类号： G05F1/565 ; G05F3/26 ; H01L49/02 ; H01L27/08 ; H01L27/06 ; H01L29/8605
摘要：
A bias current generator circuit includes a current path and a leakage control circuit. The current path is connected between a supply voltage and a ground level. The current path includes a transistor and a resistor. The transistor has a current channel connected in the current path. The resistor has an upper terminal and a lower terminal connected in the current path, and a well contact to allow a reverse leakage current of the resistor to flow through. The leakage control circuit is connected to the supply voltage. The leakage control circuit includes a driving transistor to provide a driving voltage to the well contact of the resistor, and to allow the reverse leakage current of the resistor to flow into the leakage control circuit.
公开/授权文献
- US11709517B2 Bias current generator circuit 公开/授权日：2023-07-25
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