- 专利标题： CREATION OF STRESS IN THE CHANNEL OF A NANOSHEET TRANSISTOR
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申请号： US17240002申请日： 2021-04-26
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公开(公告)号： US20210257450A1公开(公告)日： 2021-08-19
- 发明人: Nicolas Loubet , Tenko Yamashita , Guillaume Audoit , Nicolas Bernier , Remi Coquand , Shay Reboh
- 申请人： International Business Machines Corporation , COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 申请人地址： US NY Armonk; FR Paris
- 专利权人： International Business Machines Corporation,COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 当前专利权人： International Business Machines Corporation,COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 当前专利权人地址： US NY Armonk; FR Paris
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/78 ; H01L29/417
摘要：
Provided are embodiments for a semiconductor device. The semiconductor device includes a nanosheet stack comprising one or more layers, wherein the one or more layers are induced with strain from a modified sacrificial gate. The semiconductor device also includes one or more merged S/D regions formed on exposed portions of the nanosheet stack, wherein the one or more merged S/D regions fix the strain of the one or more layers, and a conductive gate formed over the nanosheet stack, wherein the conductive gate replaces a modified sacrificial gate without impacting the strain induced in the one or more layers. Also provided are embodiments for a method for creating stress in the channel of a nanosheet transistor.
公开/授权文献
- US11575003B2 Creation of stress in the channel of a nanosheet transistor 公开/授权日：2023-02-07
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