- 专利标题: Reduction of Line Wiggling
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申请号: US17113734申请日: 2020-12-07
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公开(公告)号: US20210118688A1公开(公告)日: 2021-04-22
- 发明人: Jiann-Horng Lin , Cheng-Li Fan , Chih-Hao Chen
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L21/308
- IPC分类号: H01L21/308 ; H01L21/768 ; H01L21/3213 ; H01L21/033 ; H01L21/311
摘要:
A method for reducing wiggling in a line includes forming a silicon patterning layer over a substrate and depositing a mask layer over the silicon patterning layer. The mask layer is patterned to form one or more openings therein. The mask layer is thinned and the one or more openings are widened, to provide a smaller height-to-width ratio. The pattern of the mask layer is then used to pattern the silicon patterning layer. The silicon patterning layer is used, in turn, to pattern a target layer where a metal line will be formed.
公开/授权文献
- US11594419B2 Reduction of line wiggling 公开/授权日:2023-02-28
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