Invention Application
- Patent Title: MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME
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Application No.: US17131767Application Date: 2020-12-23
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Publication No.: US20210111334A1Publication Date: 2021-04-15
- Inventor: Hui-Lin Wang , Chen-Yi Weng , Chin-Yang Hsieh , Yi-Hui Lee , Ying-Cheng Liu , Yi-An Shih , Jing-Yin Jhang , I-Ming Tseng , Yu-Ping Wang , Chien-Ting Lin , Kun-Chen Ho , Yi-Syun Chou , Chang-Min Li , Yi-Wei Tseng , Yu-Tsung Lai , JUN XIE
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu City
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu City
- Priority: CN201910634906.1 20190715
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/12 ; H01L27/22
Abstract:
A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.
Public/Granted literature
- US11387408B2 Magnetoresistive random access memory and method of manufacturing the same Public/Granted day:2022-07-12
Information query
IPC分类:
