The present disclosure provides a method for forming a semiconductor structure, including forming a bottom terminal, forming a first middle terminal over the bottom terminal, forming a top terminal over the first middle terminal, forming a first passivation layer over the top terminal, forming a first recess penetrating the first passivation layer and the bottom terminal by using a photomask, forming a dummy layer over the first passivation layer, forming an opening in the dummy layer and over the first recess, forming a conductive material in the first recess and the opening, and removing the dummy layer subsequent to forming the conductive material.