- 专利标题: MEMORY SYSTEM AND METHOD FOR CONTROLLING NONVOLATILE MEMORY
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申请号: US16564412申请日: 2019-09-09
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公开(公告)号: US20200241799A1公开(公告)日: 2020-07-30
- 发明人: Shinichi KANNO
- 申请人: TOSHIBA MEMORY CORPORATION
- 申请人地址: JP Minato-Ku
- 专利权人: TOSHIBA MEMORY CORPORATION
- 当前专利权人: TOSHIBA MEMORY CORPORATION
- 当前专利权人地址: JP Minato-Ku
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5e62f77d
- 主分类号: G06F3/06
- IPC分类号: G06F3/06
摘要:
According to one embodiment, a memory system determines a write destination block and a write destination location in the write destination block to which write data is to be written, and notifies a host of an identifier of the write data, a block address of the write destination block, and an offset indicative of the write destination location. The memory system retrieves the write data from a write buffer of the host, and writes the write data to the write destination location. In a case where a read command to designate a physical address of first data is received before a write operation of the first data is finished, the memory system reads the first data from the write buffer of the host.
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