- 专利标题： SUBSTRATE TREATMENT APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND WORKPIECE SUBSTRATE
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申请号： US16288896申请日： 2019-02-28
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公开(公告)号： US20200091092A1公开(公告)日： 2020-03-19
- 发明人: Fuyuma Ito , Yasuhito Yoshimizu , Hakuba Kitagawa
- 申请人： TOSHIBA MEMORY CORPORATION
- 申请人地址： JP Minato-ku
- 专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人地址： JP Minato-ku
- 优先权： JP2018-172284 20180914
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L21/67 ; H01J37/32
摘要：
In one embodiment, a substrate treatment apparatus includes a substrate holder configured to hold a substrate provided with a film. The apparatus further includes a film treatment module configured to treat the film in accordance with warpage of the substrate such that the film includes a first region having a first film quality or a first film thickness and a second region having a second film quality or a second film thickness different from the first film quality or the first film thickness.
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