- 专利标题： SEMICONDUCTOR DEVICE, POWER CONVERSION APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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申请号： US16447569申请日： 2019-06-20
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公开(公告)号： US20200043818A1公开(公告)日： 2020-02-06
- 发明人: Akitoshi SHIRAO
- 申请人： Mitsubishi Electric Corporation
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2018-143468 20180731
- 主分类号： H01L23/16
- IPC分类号： H01L23/16 ; H01L21/56 ; H01L21/52 ; H01L21/54 ; H01L23/31 ; H02M7/5387
摘要：
A semiconductor device includes a case surrounding a region that contains semiconductor elements and wires. The case is provided with s(an integer greater than k and equal to or greater than three)-pieces of discharge paths for discharging an encapsulation member to the region. The s-pieces of discharge paths are provided so as to surround the region as seen in a plan view. The s-pieces of discharge paths are spirally provided as seen in a plan view.
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