发明申请
- 专利标题： P-N JUNCTION BASED DEVICES WITH SINGLE SPECIES IMPURITY FOR P-TYPE AND N-TYPE DOPING
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申请号： US16417985申请日： 2019-05-21
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公开(公告)号： US20200035793A1公开(公告)日： 2020-01-30
- 发明人: Guy M. Cohen , Paul M. Solomon , Christian Lavoie
- 申请人： International Business Machines Corporation
- 主分类号： H01L29/36
- IPC分类号： H01L29/36 ; H01L21/02 ; H01L29/737 ; H01L29/732 ; H01L29/08 ; H01L29/66 ; H01L29/10
摘要：
A technique relates to a semiconductor device. A bipolar transistor includes an emitter layer and a base layer, where the emitter layer and the base layer are doped with an impurity, the impurity being a same for the emitter and base layers. The bipolar transistor includes a collector layer.
信息查询
IPC分类:
