Invention Application
- Patent Title: Integrated Structures
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Application No.: US16438334Application Date: 2019-06-11
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Publication No.: US20190333934A1Publication Date: 2019-10-31
- Inventor: Justin B. Dorhout , David Daycock , Kunal R. Parekh , Martin C. Roberts , Yushi Hu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L29/78 ; H01L29/66
Abstract:
Some embodiments include an integrated structure having a conductive material, a select device gate material over the conductive material, and vertically-stacked conductive levels over the select device gate material. Vertically-extending monolithic channel material is adjacent the select device gate material and the conductive levels. The monolithic channel material contains a lower segment adjacent the select device gate material and an upper segment adjacent the conductive levels. A first vertically-extending region is between the lower segment of the monolithic channel material and the select device gate material. The first vertically-extending region contains a first material. A second vertically-extending region is between the upper segment of the monolithic channel material and the conductive levels. The second vertically-extending region contains a material which is different in composition from the first material.
Public/Granted literature
- US11081495B2 Integrated structures Public/Granted day:2021-08-03
Information query
IPC分类:
