- 专利标题: RETENTION OF DUAL IN-LINE MEMORY MODULES
-
申请号: US16422854申请日: 2019-05-24
-
公开(公告)号: US20190281719A1公开(公告)日: 2019-09-12
- 发明人: Phil Geng , George Vergis , Xiang Li
- 申请人: Intel Corporation
- 主分类号: H05K7/12
- IPC分类号: H05K7/12 ; H05K1/11 ; H05K7/14 ; H05K7/10
摘要:
Embodiments are directed towards apparatuses, methods, and systems for a memory module, e.g., a dual in-line memory module (DIMM) including a first lengthwise edge along the DIMM and a second lengthwise edge, opposite the first lengthwise edge, to couple the DIMM with a printed circuit board (PCB). In embodiments, the DIMM includes one or more notches along the first lengthwise edge, to removeably couple with one or more flexible supports located at least partially along a length or width of a chassis and to engage the notches to assist in retention of the DIMM in the chassis to reduce a shock and/or vibration associated with a load of a plurality of DIMMs on the PCB. In some embodiments, the one or more flexible supports are coupled to a support structure, such as a pole mounted or otherwise coupled to a panel of the chassis. Additional embodiments may be described and claimed.
公开/授权文献
- US10888010B2 Retention of dual in-line memory modules 公开/授权日:2021-01-05
信息查询