Invention Application
- Patent Title: STRUCTURE TO ENABLE HIGHER CURRENT DENSITY IN INTEGRATED CIRCUIT RESISTOR
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Application No.: US15807370Application Date: 2017-11-08
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Publication No.: US20190139861A1Publication Date: 2019-05-09
- Inventor: Dhishan Kande , Archana Venugopal
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Main IPC: H01L23/42
- IPC: H01L23/42 ; H01L49/02

Abstract:
An integrated circuit has a substrate including semiconductor material and a resistor in an interconnect region, above a first level of interconnect lines. The integrated circuit further includes an electrically isolated thermal conduit having one or more interconnect lines in every interconnect level lower than the resistor. The interconnect lines of the thermal conduit are directly connected through one or more vertical interconnects, including contacts, and possibly vias, to a gate structure located on a dielectric material over the semiconductor material of the substrate. The thermal conduit is electrically isolated from the resistor, from all active components in the integrated circuit, and from the semiconductor material of the substrate.
Public/Granted literature
- US10475725B2 Structure to enable higher current density in integrated circuit resistor Public/Granted day:2019-11-12
Information query
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