Invention Application
- Patent Title: Integration Of ALD Copper With High Temperature PVD Copper Deposition For BEOL Interconnect
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Application No.: US16159128Application Date: 2018-10-12
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Publication No.: US20190115254A1Publication Date: 2019-04-18
- Inventor: Ben-Li Sheu , Feng Q. Liu , Tae Hong Ha , Mei Chang , Shirish Pethe
- Applicant: Applied Materials, Inc.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; C23C16/34 ; C23C16/44 ; C23C16/455
Abstract:
Methods and apparatus to fill a feature with a seamless gapfill of copper are described. A copper gapfill seed layer is deposited on a substrate surface by atomic layer deposition followed by a copper deposition by physical vapor deposition to fill the gap with copper.
Public/Granted literature
- US10892186B2 Integration of ALD copper with high temperature PVD copper deposition for BEOL interconnect Public/Granted day:2021-01-12
Information query
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