发明申请
- 专利标题： SEMICONDUCTOR DEVICE
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申请号： US16023889申请日： 2018-06-29
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公开(公告)号： US20190006501A1公开(公告)日： 2019-01-03
- 发明人: Ya-Yu Yang , Chia-Cheng Lui , Shang-Ju Tu
- 申请人： EPISTAR CORPORATION
- 优先权： TW106121918 20170630
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L29/20
摘要：
A semiconductor device, including: a channel layer formed on a substrate; a top barrier layer formed on the channel layer, wherein a first heterojunction is formed between the channel layer and the top barrier layer so that a first two-dimensional electron gas is generated in the channel layer; a buffer structure formed between the substrate and the channel layer; a back barrier layer formed between the buffer structure and the channel layer, wherein a second heterojunction is formed between the buffer structure and the back barrier layer so that a second two-dimensional electron gas is generated in the buffer structure; and a source electrode, a drain electrode, and a gate electrode formed on the top barrier layer, respectively; wherein a sheet carrier density of the second two-dimensional electron gas is less than 8E+10 cm−2.
公开/授权文献
- US10396191B2 Semiconductor device 公开/授权日：2019-08-27
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