- 专利标题： Semiconductor Device and Method
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申请号： US16050939申请日： 2018-07-31
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公开(公告)号： US20180366550A1公开(公告)日： 2018-12-20
- 发明人: Che-Cheng Chang , Chih-Han Lin , Horng-Huei Tseng
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： H01L29/417
- IPC分类号： H01L29/417 ; H01L29/78 ; H01L29/66 ; H01L21/324 ; H01L21/265 ; H01L23/535 ; H01L21/768
摘要：
A semiconductor device and method of manufacture are provided. A source/drain region is formed next to a spacer, which is adjacent to a gate electrode. An implantation is performed through an implantation mask into the source/drain region as well as the first spacer, forming an implantation region within the spacer.
公开/授权文献
- US10522635B2 Semiconductor device and method 公开/授权日：2019-12-31
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