A method of forming a semiconductor structure includes forming a fin cut mask over a region in a fin field-effect transistor (finFET) structure. The finFET structure includes one or more fins and one or more gates and source/drain regions formed over the one or more fins in active regions of the finFET structure. The method also includes performing a fin cut by removing a portion of at least one fin. The portion of the at least one fin is determined by an exposed area of the fin cut mask. The exposed area of the fin cut mask includes at least a portion of the at least one fin between a first dummy gate and a second dummy gate formed over the at least one fin. The method further includes removing the fin cut mask and depositing an oxide to replace the portion of the at least one fin removed during the fin cut.