- 专利标题： ENVIRONMENTAL PROTECTION FOR WAFER LEVEL AND PACKAGE LEVEL APPLICATIONS
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申请号： US15797310申请日： 2017-10-30
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公开(公告)号： US20180122716A1公开(公告)日： 2018-05-03
- 发明人: Christo Bojkov , Andrew Ketterson , Robert Charles Dry
- 申请人： Qorvo US, Inc.
- 主分类号： H01L23/29
- IPC分类号： H01L23/29 ; H01L23/00 ; H01L21/56 ; H01L23/31
摘要：
A method includes the steps of fabricating one or more semiconductor devices on a semiconductor wafer and depositing one or more conformal organic environmental protection layers over the semiconductor wafer using a vapor deposition process. By depositing the one or more conformal organic environmental protection layers using a vapor deposition process, thin film conformal organic environmental protection layers may be provided that offer excellent protection against water and oxygen ingress, thus increasing the ruggedness and reliability of the resulting semiconductor die.
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