- 专利标题： This Film Transistor and Display Panel
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申请号： US15561686申请日： 2015-03-30
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公开(公告)号： US20180097120A1公开(公告)日： 2018-04-05
- 发明人: Shigeru Ishida , Nobutake Nodera , Ryohei Takakura , Yoshiaki Matsushima , Takao Matsumoto , Kazuki Kobayashi , Taimi Oketani
- 申请人： Sakai Display Products Corporation
- 国际申请： PCT/JP2015/059860 WO 20150330
- 主分类号： H01L29/786
- IPC分类号： H01L29/786
摘要：
The thin film transistor includes a gate electrode formed on a surface of a substrate; a first amorphous silicon layer formed on an upper side of the gate electrode; a plurality of polysilicon layers separated by the first amorphous silicon layer and formed on the upper side of the gate electrode with a required spaced dimension; a second amorphous silicon layer and an n+ silicon layer which are formed on the upper side of the plurality of polysilicon layers and the first amorphous silicon layer; and a source electrode and a drain electrode formed on the n+ silicon layer.
公开/授权文献
- US10008606B2 Thin film transistor and display panel 公开/授权日：2018-06-26
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