- 专利标题: INTERPOSER SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
-
申请号: US15796713申请日: 2017-10-27
-
公开(公告)号: US20180047662A1公开(公告)日: 2018-02-15
- 发明人: Che-Wei Hsu , Shih-Ping Hsu , Chih-Wen Liu
- 申请人: PHOENIX PIONEER TECHNOLOGY CO., LTD.
- 申请人地址: TW HSINCHU COUNTY
- 专利权人: PHOENIX PIONEER TECHNOLOGY CO., LTD.
- 当前专利权人: PHOENIX PIONEER TECHNOLOGY CO., LTD.
- 当前专利权人地址: TW HSINCHU COUNTY
- 优先权: TW103129812 20140829
- 主分类号: H01L23/498
- IPC分类号: H01L23/498 ; H01L21/48 ; H05K3/46 ; H01L23/13 ; H05K3/20 ; H01L23/14
摘要:
A method of manufacturing an interposer substrate, including providing a carrier having a first circuit layer formed thereon, forming a plurality of conductive pillars on the first circuit layer, forming a first insulating layer on the carrier, with the conductive pillars being exposed from the first insulating layer, forming, on the conductive pillars a second circuit layer that is electrically connected to the conductive pillars, forming a second insulating layer on the second surface of the first insulating layer and the second circuit layer, exposing a portion of a surface of the second circuit layer from the second insulating layer, and removing the carrier. The invention further provides the interposer substrate as described above.
信息查询
IPC分类: