- 专利标题： SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD
-
申请号： US15017197申请日： 2016-02-05
-
公开(公告)号： US20170229575A1公开(公告)日： 2017-08-10
- 发明人: CHEN-LIANG CHU , TA-YUAN KUNG , KER-HSIAO HUO , YI-HUAN CHEN
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L23/522 ; H01L29/06
摘要：
A semiconductor structure is disclosed. The semiconductor structure includes: a substrate of a first conductivity; a first region of the first conductivity formed in the substrate; a second region of the first conductivity formed in the first region, wherein the second region has a higher doping density than the first region; a source region of a second conductivity formed in the second region; a drain region of the second conductivity formed in the substrate; a pickup region of the first conductivity formed in the second region and adjacent to the source region; and a resist protective oxide (RPO) layer formed on a top surface of the second region. An associated fabricating method is also disclosed.
公开/授权文献
- US09831340B2 Semiconductor structure and associated fabricating method 公开/授权日：2017-11-28
信息查询
IPC分类:
