- 专利标题: REDUCING THERMAL RUNAWAY IN INVERTER DEVICES
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申请号: US14934793申请日: 2015-11-06
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公开(公告)号: US20170133923A1公开(公告)日: 2017-05-11
- 发明人: Gregory G. Freeman , Siyuranga O. Koswatta
- 申请人: GLOBALFOUNDRIES INC.
- 申请人地址: KY GRAND CAYMAN
- 专利权人: GLOBALFOUNDRIES INC.
- 当前专利权人: GLOBALFOUNDRIES INC.
- 当前专利权人地址: KY GRAND CAYMAN
- 主分类号: H02M1/32
- IPC分类号: H02M1/32
摘要:
An inverter circuit for reducing runaway current due to applied voltage stress and temperature conditions comprises: first and second field effect transistor (FET) devices of opposite device polarities for driving a connected second stage device having a connected 2nd stage first and second FET devices, each 2nd stage device having a respective input gate terminal. The first FET and second FET devices have a respective output drive terminal, a first conductive structure connects the first FET output drive terminal to the input gate terminal of each the first and second connected FET device and further connects the first FET output drive terminal to the second FET output drive terminal through a ballasting resistor device. A second separate conductive structure connects the second FET output drive terminal to the input gate terminals and includes a path further connecting the second FET output drive terminal to the first FET output drive terminal through the ballasting resistor device.
公开/授权文献
- US09906213B2 Reducing thermal runaway in inverter devices 公开/授权日:2018-02-27
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