REDUCING THERMAL RUNAWAY IN INVERTER DEVICES
摘要:
An inverter circuit for reducing runaway current due to applied voltage stress and temperature conditions comprises: first and second field effect transistor (FET) devices of opposite device polarities for driving a connected second stage device having a connected 2nd stage first and second FET devices, each 2nd stage device having a respective input gate terminal. The first FET and second FET devices have a respective output drive terminal, a first conductive structure connects the first FET output drive terminal to the input gate terminal of each the first and second connected FET device and further connects the first FET output drive terminal to the second FET output drive terminal through a ballasting resistor device. A second separate conductive structure connects the second FET output drive terminal to the input gate terminals and includes a path further connecting the second FET output drive terminal to the first FET output drive terminal through the ballasting resistor device.
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