Invention Application
- Patent Title: INTEGRATED CIRCUIT AND SEMICONDUCTOR DEVICE
-
Application No.: US15409523Application Date: 2017-01-18
-
Publication No.: US20170133380A1Publication Date: 2017-05-11
- Inventor: Ha-young KIM , Sung-we CHO , Tae-joong SONG , Sang-hoon BAEK
- Applicant: Samsung Electronics Co., Ltd.
- Priority: KR10-2015-0049953 20150408; KR10-2015-0128566 20150910
- Main IPC: H01L27/092
- IPC: H01L27/092 ; G06F17/50 ; H01L27/02 ; H01L23/522 ; H01L23/528

Abstract:
An embodiment includes an integrated circuit comprising a standard cell, the standard cell comprising: first and second active regions having different conductivity types and extending in a first direction; first, second, and third conductive lines extending over the first and second active regions in a second direction substantially perpendicular to the first direction, and disposed parallel to each other; and a cutting layer extending in the first direction between the first and second active regions and separating the first conductive line into a first upper conductive line and a first lower conductive line, the second conductive line into a second upper conductive line and a second lower conductive line, and the third conductive line into a third upper conductive line and a third lower conductive line; wherein: the first upper conductive line and the third lower conductive line are electrically connected together; and the second upper conductive line and the second lower conductive line are electrically connected together.
Public/Granted literature
- US09905561B2 Integrated circuit and semiconductor device Public/Granted day:2018-02-27
Information query
IPC分类: