发明申请
- 专利标题： SEMICONDUCTOR DEVICE
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申请号： US15295821申请日： 2016-10-17
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公开(公告)号： US20170125597A1公开(公告)日： 2017-05-04
- 发明人: Sung-Soo KIM , Gi-Gwan PARK , Song-E KIM , Koung-Min RYU , Sun-Ki MIN
- 申请人： Sung-Soo KIM , Gi-Gwan PARK , Song-E KIM , Koung-Min RYU , Sun-Ki MIN
- 优先权： KR10-2015-0153700 20151103
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/417 ; H01L29/06
摘要：
A semiconductor device is provided which includes a first fin-type pattern including a first side surface and a second side surface opposite to each other, a first trench of a first depth adjacent to the first side surface, a second trench of a second depth adjacent to the second side surface. The second depth differs from the first depth, and a first field insulating film partially fills the first trench and a second field insulating film partially fills the second trench. The first fin-type pattern has a lower portion, and an upper portion having a narrower width than the lower portion, and has a first stepped portion on a boundary between the upper portion and the lower portion. The first field insulating film includes a first lower field insulating film in contact with the lower portion, and a first upper field insulating film in contact with the upper portion.
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