- 专利标题： STRUCTURE AND METHOD FOR MULTI-THRESHOLD VOLTAGE ADJUSTED SILICON GERMANIUM ALLOY DEVICES WITH SAME SILICON GERMANIUM CONTENT
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申请号： US14921384申请日： 2015-10-23
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公开(公告)号： US20170117413A1公开(公告)日： 2017-04-27
- 发明人: Pouya Hashemi , Pranita Kerber , Christine Q. Ouyang , Alexander Reznicek
- 申请人： International Business Machines Corporation
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/8238 ; H01L27/092
摘要：
A semiconductor structure includes a first fin structure having a first strain located on a surface of a first insulator layer portion. The first fin structure includes a first doped silicon germanium alloy fin portion having a first germanium content and a silicon germanium alloy fin portion having a third germanium content. A second fin structure having a second strain is located on a surface of a second insulator layer portion. The second fin structure includes a second doped silicon germanium alloy fin portion having a second germanium content and a silicon germanium alloy fin portion having the third germanium content, wherein the first germanium content differs from the second germanium content and the third germanium content is greater than the first and second germanium contents, and wherein the first strain differs from the second strain.
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